7n70 1 / 7 may.2015-rev.00 www.dyelec.com 1. gate 2. drain 3. source pin definition: product summary v ds (v) current(a) 700 r ds(on) (?) 1.6 @ v gs =10v 7 700v n-channel power mosfet absolute maximum ratings (t c =25c, unless otherwise specified) r ds(on ), v gs @10v,id@3.5a<1.6 fast switching capability low gate charge lead free in compliance with eu rohs directive. green molding compound block diagram ordering information case: to-220,ito-220,to-262,to-263 package d g s parameter symbol ratings unit drain-source voltage v dss 700 v gate-source voltage v gss 30 v continuous drain current i d 7 a pulsed drain current i dm 28 a e as 530 mj power dissipation to-220/to-262/to-263 p d 142 w ito-220 45 w junction temperature t j +150 c operating temperature t opr -55 ~ +150 c storage temperature t stg -55 ~ +150 c part no. package packing dmt7n70-tu to-220 50pcs / tube dmf7n70-tu ito-220 50pcs / tube notes : 1. l=19.5mh, i as = 7a, v dd =50v, r g =25ohm, starting t j =25 o c 2. pulse width<300us, duty cycle< 2% 3. essentially independent of operating temperature typical characteristics. 4. guaranteed by design, not subject to production testing single pulse avalanche energy (note 1) dmk7n70-tu to-262 50pcs / tube dmg7n70-tu to-263 50pcs / tube DMG7N70-TR to-263 800pcs / 13" reel
2 / 7 thermal data 7n70 700v n-channel power mosfet electrical characteristics (t c =25c, unless otherwise specified) parameter symbol rating unit junction to ambient to-220/to-262/to-263 ito-220 ja 62.5 c/w junction to case to-220/to-262/to-263 jc 0.9 c/w i to-220 2.6 may.2015-rev.00 www.dyelec.com parameter symbol test condition min. typ. max. units static drain-source breakdown voltage bv dss v gs =0v,i d =250ua 7 00 - - v gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 2 4 v drain-source on-state resistance r ds(on) v gs =10v,i d =3.5a - 1.4 1.6 zero gate voltage drain curr ent i dss v ds =700v,v gs =0v - 1 .0 ua gate-source leakage current i gss v gs =+30v,v ds =0v - +100 na diode forward voltage v sd i s =7a,v gs =0v - 1.4 v dynamic (note 4) total gate charge q g v ds =100v, i d =7a, v gs =10v (note 2,3) - 163 - nc gate-source charge q gs - 12 - gate-drain charge q gd - 30 - input capacitance ciss v ds =25v, v gs =0v, f=1.0mhz - 1200 1600 pf output capacitance coss - 150 190 reverse transfer capacitance crss - 60 80 turn-on delay time td (on) v dd =3 0v, i d =1a, r g = 25 (note 2,3) - 60 80 ns turn-on rise time t r - 200 230 turn-off delay time td (off) - 280 350 turn-off fall time t f - 250 300 drain-source diode maximum continuous drain-source diode forward current i s --- - - 6 a maximum pulsed drain-source diode forward current i sm --- - - 24 a reverse recovery time trr v gs =0v, i s =7a di f / dt=100a/us (note 2) - 320 - ns reverse recovery charge qrr - 2.4 - uc - - - -
3 / 7 typical characteristics 700v n-channel power mosfet may.2015-rev.00 www.dyelec.com 7n70
700v n-channel power mosfet 7n70 4 / 7 may.2015-rev.00 www.dyelec.com typical characteristics 1 0.1 0.2 source-drain voltage, v sd (v) reverse drain current, i dr (a) on state current vs. allowable case temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 150 25 notes: 1.1. gs =0v 2. 250s test notes: 1. jc (t) = 0.88 /w max. 2. duty factor, d=t1/t2 3. t jm -t c =p dm jc (t) thermal response, jc (t) 1 0.1 0.01 1e-5 1e-4 1e-3 0.01 0.1 1 10 square wave pulse duration, t 1 (sec) transient thermal response curve
5 / 7 700v n-channel power mosfet may.2015-rev.00 www.dyelec.com 7n70 t o - 220 mechanical drawing t o - 220 mechanical drawing it o-220 m echanical drawing
7n70 700v n-channel power mosfet 6 / 7 may,2015-rev.00 www.dyelec.com to-262 mechanical drawing to-263 mechanical drawing
7 / 7 notice specifications of the products displayed herein are subject to change without notice. diyi or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in diyis terms and conditions of sale for such products, diyi assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of diyi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify diyi for any damages resulting from such improper use or sale. 700v n-channel power mosfet may.2015-rev.00 www.dyelec.com 7n70
|
